6mbi100fc - 060 fuji electric igbt transistor module a d v a n c i n g t h e s e m i c o n d u c t o r i n d u s t r y s i n c e 1 9 7 2 ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 2 revised 06/2013 features applications ? square rbsoa ? low saturation voltage ? less total power dissipation ? improved fwd characteristic ? minimized internal stray inductance ? overcurrent limiting function ? high power switching ? a.c. or d.c. motor control ? uninterruptible power supplies dimensional schematic mm aa 94.0 ab 18.5 ac 10.0 ae 17.0 ah 14.0 ak 4.5 al 7.0 am 66.0 an 80.0 ba 86.0 bb 74.0 bc 6.0 be 61.0 bh 6.5 bk 28.0 bl 4.5 bm 5.5 bn 20.0 bp 18.0 br 15.0 bt 5.0 bu 10.5 ca 27.0 cb 25.5 cc 6.5 ce 2.5 ch 3.0 ds 4 - ?5.4 abstract the 6mbi100fc - 060 is a discontinued insulated - gate bipolar transistor in a modular package by fuji electric, currently in last time buy sale through american microsemiconductor.
a d v a n c i n g t h e s e m i c o n d u c t o r i n d u s t r y s i n c e 1 9 7 2 6mbi100fc - 060 fuji electric igbt transistor module ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 2 of 2 revised 06/2013 electrical characteristics e quivalent circuit v ces v ges i c cont. p c v ce (sat) max. (v ge =15v) i c switching time (max.) (sec) on t off t r 600 20 100 360 2.5 100 --- 1.5 1.0
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